DocumentCode :
1915632
Title :
Low-Frequency Noise in SiGe P-Channel MOSFETs designed for 0.13 um Technology
Author :
Okhonin, S. ; Georgescu, B. ; Py, M.A. ; Fischer, H. ; Risch, L.
Author_Institution :
Swiss Federal Institute of Technology, Lausanne, Switzerland
fYear :
1998
fDate :
8-10 Sept. 1998
Firstpage :
504
Lastpage :
507
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Conference_Location :
Bordeaux, France
Print_ISBN :
2-86332-234-6
Type :
conf
Filename :
1503599
Link To Document :
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