DocumentCode
1915649
Title
High frequency-high power static induction transistor
Author
Tatsuta, M. ; Yamanaka, E. ; Nishizawa, J.
Author_Institution
Tokin Corp., Sendai, Japan
fYear
1993
fDate
2-8 Oct 1993
Firstpage
1321
Abstract
The characteristics, physical construction, and application of a newly commercialized high-frequency SIT (static induction transistor) are discussed. The main features of this device are a lowering in the gate-to-source and gate-to-drain capacitances, and an increase in the breakdown voltage and power rating. These enhancements were brought about as a result of the introduction of new and refined manufacturing technologies. This SIT device is currently being applied in applications such as medium-wavelength radio transmitters and induction heaters
Keywords
field effect transistors; power transistors; breakdown voltage; capacitance reduction; gate-to-drain capacitance; gate-to-source capacitance; high-frequency SIT; induction heaters; medium-wavelength radio transmitters; physical construction; power rating; static induction transistor; Capacitance; Commercialization; Cutoff frequency; Induction generators; Manufacturing; Power generation; Power supplies; Radio broadcasting; Radio transmitters; Refining;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Society Annual Meeting, 1993., Conference Record of the 1993 IEEE
Conference_Location
Toronto, Ont.
Print_ISBN
0-7803-1462-X
Type
conf
DOI
10.1109/IAS.1993.299113
Filename
299113
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