Characterization of InAlAs/InGaAs HFETs with High Indium Content in the Channel Grown on GaAs Substrate

Author

Rorsman, Niklas ; Karlsson, Christer ; Zirath, Herbert ; Wang, Shumin M. ; Andersson, Thorvald G.

Author_Institution

Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

765

Lastpage

768

Abstract

InAlAs/InGaAs HFETs having very high indium content (80 and 100%) in the channel have been fabricated on GaAs and electrically characterized. The extrinsic transconductance were 310 mS/mm (560 mS/mm at 77 K), and the saturation current were 700 mA/mm (600 mA/mm at 77 K) for an InAs channel. The value of f_T and f_max for this device were measured to be 80 GHz and 50 GHz, respectively. The In_0.8Ga_0.2As channel material had extrinsic transconductance of 320 mS/mm (470 mS/mm at 77 K), and the saturation current were 520 mA/mm (440 mA/mm at 77K). The value of f_T and f_max for this device were measured to be 80 GHz and 50 GHz, respectively.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor heterojunctions; GaAs substrate; HFET; InAlAs-InGaAs; channel growth; extrinsic transconductance; high indium content; saturation current; temperature 77 K; Electron mobility; Gallium arsenide; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Lattices; MODFETs; Microwave technology; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435603