DocumentCode :
1915732
Title :
Cross-Sensitivity Elimination in a 3-Dimensional Magnetic Sensor
Author :
Wang, B. ; Misra, D.
Author_Institution :
Electr. & Comput. Eng. Dept., New Jersey Inst. of Technol., Newark, NJ, USA
fYear :
1993
fDate :
13-16 Sept. 1993
Firstpage :
775
Lastpage :
778
Abstract :
In a 3-dimensional integrated magnetic sensor cross-axis sensitivities among the various components of the magnetic field have been a practical design problem. This paper describes the elimination of any cross-sensitivity if a 3 dimensional magnetic sensor is implemented in BiCMOS technology. A device is designed and fabricated by placing a split-collector magnetotransistor and a split drain MOSFET adjacent to each other to detect the three components of the magnetic field vector.
Keywords :
BiCMOS integrated circuits; MOSFET; magnetic field measurement; magnetic sensors; three-dimensional integrated circuits; 3-dimensional integrated magnetic sensor; BiCMOS technology; cross-axis sensitivity elimination; magnetic field vector; split-collector magnetotransistor; split-drain MOSFET; BiCMOS integrated circuits; CMOS technology; Design engineering; Lorentz covariance; MOS devices; MOSFETs; Magnetic devices; Magnetic fields; Magnetic sensors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
Print_ISBN :
2863321358
Type :
conf
Filename :
5435605
Link To Document :
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