Title :
Study of a new SiO2 etching process allowing deep and anisotropic trenches. Optimization of new reactor parameters by means of actinometry.
Author :
Morgenroth, L. ; Peccoud, L. ; Baussand, P.
Author_Institution :
LETI, CEA-Technol. Av., Grenoble, France
Abstract :
This study characterizes the SiO2 etching by two gases C2F6 and CF4, in an experimental high-density reactor. The effect of some experimental parameter variations on the etching rate and F and CF2 radical concentration, has been studied and correlated to the self-induced voltage and the substrate temperature.
Keywords :
carbon compounds; radiometry; reactors (electric); silicon compounds; sputter etching; C2F6; CF4; SiO2; actinometry; anisotropic trenches; deep trenches; etching process; etching rate; experimental parameter variations; high-density reactor; radical concentration; reactor parameters; self-induced voltage; substrate temperature; Anisotropic magnetoresistance; Electrodes; Etching; Fault location; Fluid flow; Gases; Inductors; Spectroscopy; Temperature; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
