Title :
Mobility enhancement of two-dimensional holes in strained Si/SiGe MOSFETs
Author :
Oberhuber, R. ; Zandler, G. ; Vogl, P.
Author_Institution :
Technische Universit¨at M¨unchen, Garching, Germany
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Conference_Location :
Bordeaux, France
Print_ISBN :
2-86332-234-6
