Title :
A miniaturized GaAs power amplifier for 1.5 GHz digital cellular phones
Author :
Makioka, S. ; Enomoto, S. ; Furukawa, H. ; Tateoka, K. ; Yoshikawa, N. ; Kanazawa, K.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
An extremely miniaturized GaAs PA has been developed for the application in 1.5-GHz Japanese digital cellular phones. By using MuMIC (i.e. multilayer microwave integrated circuit) technology, the half sized (0.2 cc) PA with 1.1 W output power has successfully been implemented. The 48-% power-added efficiency has been obtained with drain supply voltage of 3.5-V.
Keywords :
III-V semiconductors; UHF integrated circuits; UHF power amplifiers; cellular radio; digital radio; gallium arsenide; integrated circuit design; mobile radio; 1.1 W; 1.5 GHz; 3.5 V; 48 percent; GaAs; MuMIC; digital cellular phones; drain supply voltage; multilayer microwave integrated circuit; output power; power amplifier; power-added efficiency; Cellular phones; FETs; Gallium arsenide; High power amplifiers; Integrated circuit technology; Microwave integrated circuits; Nonhomogeneous media; Power amplifiers; Power generation; Thermal resistance;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3360-8
DOI :
10.1109/MCS.1996.506293
