DocumentCode
1916003
Title
Detailed Analysis of Buried Oxide Degradation Induced by Hot-Carrier Injection
Author
Guichard, E. ; Cristoloveanu, S. ; Reimbold, G. ; Borel, G.
Author_Institution
LETI, CEA-Technol. Av., Grenoble, France
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
825
Lastpage
828
Abstract
The degradations of the SIMOX buried oxide after either front channel stress in p-MOSFETs or back channel stress in n-MOSFETs are analyzed as a function of drain bias and correlated. It is found that this damage may be alleviated and the device lifetime extended over 10 years by scaling the drain bias below 3V.
Keywords
MOSFET; SIMOX; hot carriers; SIMOX buried oxide; back channel stress; buried oxide degradation; drain bias; front channel stress; hot-carrier injection; n-MOSFET; p-MOSFET; Aging; Degradation; Electron traps; Hot carrier injection; Hot carriers; MOSFET circuits; Stress; Temperature; Testing; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435616
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