• DocumentCode
    1916063
  • Title

    InP/GaInAs/InP dual metal-semiconductor-metal photodetectors with a strained AlInP barrier enhancement layer for balanced heterodyne detection

  • Author

    Shu, C. ; Chan, P.T. ; Hsu, C.C.

  • Author_Institution
    Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    6
  • Lastpage
    9
  • Abstract
    A monolithic pair of InP/Ga0.47In0.53As/InP metal-semiconductor-metal photodetectors with a strained Al0.1In0.9P cap layer was fabricated. The dual photodetectors exhibit closely matched frequency characteristics. Effective laser intensity noise suppression and a beat signal enhancement in 100 MHz balanced heterodyne detection was experimentally demonstrated
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterodyne detection; indium compounds; metal-semiconductor-metal structures; photodetectors; semiconductor device noise; 100 MHz; Al0.1In0.9P; InP-Ga0.47In0.53As-InP; InP/Ga0.47In0.53As/InP; InP/GaInAs/InP dual metal-semiconductor-metal photodetectors; balanced heterodyne detection; beat signal enhancement; effective laser intensity noise suppression; matched frequency characteristics; monolithic pair; strained Al0.1In0.9P cap layer; strained AlInP barrier enhancement layer; Detectors; Frequency; Gold; Indium phosphide; Laser noise; Optical buffering; Optical devices; Optical films; Photodetectors; Schottky barriers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
  • Conference_Location
    Shatin
  • Print_ISBN
    0-7803-5648-9
  • Type

    conf

  • DOI
    10.1109/HKEDM.1999.836395
  • Filename
    836395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1916063