Title :
InP/GaInAs/InP dual metal-semiconductor-metal photodetectors with a strained AlInP barrier enhancement layer for balanced heterodyne detection
Author :
Shu, C. ; Chan, P.T. ; Hsu, C.C.
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong
Abstract :
A monolithic pair of InP/Ga0.47In0.53As/InP metal-semiconductor-metal photodetectors with a strained Al0.1In0.9P cap layer was fabricated. The dual photodetectors exhibit closely matched frequency characteristics. Effective laser intensity noise suppression and a beat signal enhancement in 100 MHz balanced heterodyne detection was experimentally demonstrated
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterodyne detection; indium compounds; metal-semiconductor-metal structures; photodetectors; semiconductor device noise; 100 MHz; Al0.1In0.9P; InP-Ga0.47In0.53As-InP; InP/Ga0.47In0.53As/InP; InP/GaInAs/InP dual metal-semiconductor-metal photodetectors; balanced heterodyne detection; beat signal enhancement; effective laser intensity noise suppression; matched frequency characteristics; monolithic pair; strained Al0.1In0.9P cap layer; strained AlInP barrier enhancement layer; Detectors; Frequency; Gold; Indium phosphide; Laser noise; Optical buffering; Optical devices; Optical films; Photodetectors; Schottky barriers;
Conference_Titel :
Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
Conference_Location :
Shatin
Print_ISBN :
0-7803-5648-9
DOI :
10.1109/HKEDM.1999.836395
