Title :
Burst Noise And Tunneling Currents In Lattice-Mismatched InP/InGaAs/InP Photodetector Arrays.
Author :
Pogany, D. ; Ababou, S. ; Guillot, G. ; Vilotitch, B. ; Lenoble, C.
Author_Institution :
Lab. de Phys. de la Mater., INSA-Lyon, Villeurbanne, France
Abstract :
Burst noise (BN) and reverse current are studied in lattice-mismatched InP/InGaAs/InP photodiodes. BN is related to the presence of an excess current (EC) which sometimes exhibits a clear tunneling behavior. The mean pulse widths, the BN amplitude and the EC are thermally activated. The results suggest that the BN is due to the EC which flows through a crystalline defect and is modulated by an action of a small lattice defect located at the leakage site. Influence of some substrate and lattice-mismatch defects is discussed.
Keywords :
III-V semiconductors; burst noise; crystal defects; gallium arsenide; indium compounds; photodetectors; photodiodes; tunnelling; BN amplitude; InP-InGaAs-InP; burst noise; clear tunneling behavior; crystalline defect; excess current; lattice-mismatched photodetector arrays; lattice-mismatched photodiodes; leakage site; mean pulse widths; tunneling currents; Dark current; Diodes; Fluctuations; Indium gallium arsenide; Indium phosphide; Leakage current; Photodetectors; Photodiodes; Tunneling; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
