DocumentCode :
1916133
Title :
Structural optimization of quantum confined Stark shift in InGaAs/InGaAsP quantum wells
Author :
Tütken, T. ; Hawdon, B.J. ; Zimmermann, M. ; Hangleiter, A. ; Härle, V. ; Scholz, F.
Author_Institution :
4. Phys. Inst., Univ. Stuttgart, Stuttgart, Germany
fYear :
1993
fDate :
13-16 Sept. 1993
Firstpage :
855
Lastpage :
858
Abstract :
We have performed a study of differently shaped InGaAs/InGaAsP quantum wells (Lz = 10 nm) with a view to finding the structure which produces the largest quantum confined Stark shift. We find both theoretically and experimentally that our greatest shift is produced by the structure composed of stepped quantum wells.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum confined Stark effect; semiconductor quantum wells; InGaAs-InGaAsP; InGaAs-InGaAsP quantum wells; quantum confined Stark shift; size 10 nm; stepped quantum wells; structural optimization; Absorption; Charge carrier processes; Excitons; Indium gallium arsenide; Intensity modulation; Optical modulation; Potential well; Quantum mechanics; Resonance; Stark effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
Print_ISBN :
2863321358
Type :
conf
Filename :
5435622
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1916133
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