• DocumentCode
    1916133
  • Title

    Structural optimization of quantum confined Stark shift in InGaAs/InGaAsP quantum wells

  • Author

    Tütken, T. ; Hawdon, B.J. ; Zimmermann, M. ; Hangleiter, A. ; Härle, V. ; Scholz, F.

  • Author_Institution
    4. Phys. Inst., Univ. Stuttgart, Stuttgart, Germany
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    855
  • Lastpage
    858
  • Abstract
    We have performed a study of differently shaped InGaAs/InGaAsP quantum wells (Lz = 10 nm) with a view to finding the structure which produces the largest quantum confined Stark shift. We find both theoretically and experimentally that our greatest shift is produced by the structure composed of stepped quantum wells.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; quantum confined Stark effect; semiconductor quantum wells; InGaAs-InGaAsP; InGaAs-InGaAsP quantum wells; quantum confined Stark shift; size 10 nm; stepped quantum wells; structural optimization; Absorption; Charge carrier processes; Excitons; Indium gallium arsenide; Intensity modulation; Optical modulation; Potential well; Quantum mechanics; Resonance; Stark effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435622
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1916133