Title :
A silicon BiCMOS transceiver front-end MMIC covering 900 and 1900 MHz applications
Author :
Titus, W. ; Shifrin, M. ; Asparin, V. ; Bedard, B.
Author_Institution :
Hittite Microwave Corp., Woburn, MA, USA
Abstract :
A silicon BiCMOS transceiver front-end consisting of a low noise amplifier, power amplifier, and SPDT switch is described. The chip runs off a 5 V supply and requires a single CMOS/TTL control line for switch control. The LNA path has a 22 dB gain and 4 dB noise figure at 900 MHz. The PA has a gain of 22 dB and an output power of 15 dBm. The SPDT switch has an insertion loss of 1.3 dB, and an isolation of 22 dB at 900 MHz.
Keywords :
BiCMOS analogue integrated circuits; MMIC; UHF integrated circuits; silicon; transceivers; 1.3 dB; 1900 MHz; 22 dB; 4 dB; 5 V; 900 MHz; CMOS/TTL control line; SPDT switch; Si; low noise amplifier; power amplifier; silicon BiCMOS transceiver front-end MMIC; BiCMOS integrated circuits; Gain; Insertion loss; Low-noise amplifiers; MMICs; Noise figure; Power generation; Silicon; Switches; Transceivers;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3360-8
DOI :
10.1109/MCS.1996.506306
