Title :
A 1.0 V GaAs receiver front-end IC for mobile communication equipment
Author :
Itoh, J. ; Nakatsuka, T. ; Nishitsuji, M. ; Uda, T. ; Ishikawa, O.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
A 1.0 V operation GaAs receiver front-end IC has been developed by using novel combination of an E-FET and a D-FET for the amplifiers and mixer, high performance GaAs BP-MESFET and on-chip high-/spl epsiv//sub r/, capacitors. The IC shows conversion gain (CG) of 23 dB noise figure (NF) of 2.8 dB, the 3rd order output intercept point (IP3out) of 3 dBm, image rejection ratio (IRR) over 20 dB and LO to RF isolation over 25 dB, operating at 880 MHz and 6.8 mA. At 1.9 GHz, the IC also has excellent RF characteristics at dissipation current of 6.5 mA. The IC chip has the small size of 0.75 mm/spl times/0.75 mm, and is molded in a mini-6pin package.
Keywords :
III-V semiconductors; UHF integrated circuits; field effect analogue integrated circuits; gallium arsenide; land mobile radio; radio receivers; 1.0 V; 2.8 dB; 23 dB; 6.8 mA; 880 MHz; BP-MESFET; D-FET; E-FET; GaAs; GaAs receiver front-end IC; LO to RF isolation; RF characteristics; amplifier; conversion gain; dissipation current; image rejection ratio; mini-6pin package; mixer; mobile communication equipment; noise figure; on-chip capacitors; third order output intercept point; Capacitors; Character generation; Gallium arsenide; Image converters; Integrated circuit noise; Mobile communication; Noise figure; Operational amplifiers; Radio frequency; Radiofrequency integrated circuits;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3360-8
DOI :
10.1109/MCS.1996.506307
