• DocumentCode
    1916213
  • Title

    On the oxide thickness dependence of the time-dependent-dielectric-breakdown

  • Author

    Oussalah, S. ; Nebel, F.

  • Author_Institution
    Lab. de Microelectron. de Puissance, Tours Univ., France
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    42
  • Lastpage
    45
  • Abstract
    In this work, we investigate the reliability of SiO2 films ranging from 20 to 65 nm. Time-dependent dielectric breakdown (TDDB) tests are conducted under constant current injection. Assuming that the logarithm of the median-time-to-failure, In(t50), is described by a linear electric field dependence. A generalized law for the long-term reliability of the dielectric, taking into account the applied electric field and the dielectric thickness, is proposed
  • Keywords
    dielectric thin films; electric breakdown; reliability; silicon compounds; 20 to 65 nm; SiO2; constant current injection; dielectric thickness; linear electric field dependence; oxide thickness dependence; reliability; time-dependent-dielectric-breakdown; Current density; Current measurement; Density measurement; Dielectric breakdown; Electric breakdown; Integrated circuit reliability; MOS capacitors; MOS devices; Performance evaluation; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
  • Conference_Location
    Shatin
  • Print_ISBN
    0-7803-5648-9
  • Type

    conf

  • DOI
    10.1109/HKEDM.1999.836404
  • Filename
    836404
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1916213