Title :
On the oxide thickness dependence of the time-dependent-dielectric-breakdown
Author :
Oussalah, S. ; Nebel, F.
Author_Institution :
Lab. de Microelectron. de Puissance, Tours Univ., France
Abstract :
In this work, we investigate the reliability of SiO2 films ranging from 20 to 65 nm. Time-dependent dielectric breakdown (TDDB) tests are conducted under constant current injection. Assuming that the logarithm of the median-time-to-failure, In(t50), is described by a linear electric field dependence. A generalized law for the long-term reliability of the dielectric, taking into account the applied electric field and the dielectric thickness, is proposed
Keywords :
dielectric thin films; electric breakdown; reliability; silicon compounds; 20 to 65 nm; SiO2; constant current injection; dielectric thickness; linear electric field dependence; oxide thickness dependence; reliability; time-dependent-dielectric-breakdown; Current density; Current measurement; Density measurement; Dielectric breakdown; Electric breakdown; Integrated circuit reliability; MOS capacitors; MOS devices; Performance evaluation; Testing;
Conference_Titel :
Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
Conference_Location :
Shatin
Print_ISBN :
0-7803-5648-9
DOI :
10.1109/HKEDM.1999.836404
