Title :
Interface properties of N2O-annealed NH3-treated 6H-SiC MOS capacitor
Author :
Lai, P.T. ; Xu, P. ; Chan, C.L. ; Cheng, Y.C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Abstract :
Effects of pre-oxidation NH3 treatment and post-oxidation N2O annealing on n-SiC/SiO2 interface properties were investigated as compared to conventional thermally-oxidized devices. It was found that NH3 treatment before oxidation is beneficial for the interface-quality improvement. Moreover, the combination of NH3 treatment with N2O annealing can further harden the SiC/SiO2 interface, enhancing its resistance against high-field and high-temperature stressings
Keywords :
MOS capacitors; annealing; interface states; silicon compounds; surface treatment; wide band gap semiconductors; 6H-SiC MOS capacitor; N2O; NH3; SiC-SiO2; high-field stressing; high-temperature stressing; interface properties; interface-quality; post-oxidation N2O annealing; pre-oxidation NH3 treatment; Annealing; Capacitance-voltage characteristics; Hafnium; Interface states; MOS capacitors; Oxidation; Silicon carbide; Surface cleaning; Surface treatment; Thermal conductivity;
Conference_Titel :
Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
Conference_Location :
Shatin
Print_ISBN :
0-7803-5648-9
DOI :
10.1109/HKEDM.1999.836405
