• DocumentCode
    1916362
  • Title

    On P-I-N Diode Parameters and Static Properties at Elevated Temperatures and High Current Densities-Experiment vs. Simulation

  • Author

    Bleichner, H. ; Rosling, M. ; Jonsson, P. ; Masszi, F. ; Vojdani, F. ; Isberg, M. ; Nordlander, E.

  • Author_Institution
    Dept. of Technol., Uppsala Univ., Uppsala, Sweden
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    895
  • Lastpage
    898
  • Abstract
    A well calibrated free-carrier absorption (FCA) technique was used to characterize the physical properties of P-I-N diode samples at different temperatures and injection levels. The measurements were compared with simulations in order to check the validity of some models and parameters which commonly appear in the simulation programs. The samples, as well as measurement temperatures (30-150°C) and injection levels (1015-1017cm-3), are typical for the driving conditions of power devices.
  • Keywords
    current density; p-i-n diodes; FCA technique; P-I-N diode parameters; elevated temperatures; free-carrier absorption; high current densities; static properties; temperature 30 degC to 150 degC; Absorption; Density measurement; Educational institutions; Optical scattering; P-i-n diodes; Power measurement; Probes; Silicon; Temperature measurement; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1916362