Title :
A novel MMIC source impedance tuner for on-wafer microwave noise parameter measurements
Author :
Collins, C.E. ; Pollard, R.D. ; Miles, R.E.
Author_Institution :
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
Abstract :
A novel GaAs HEMT MMIC source impedance tuner is reported which can be incorporated into a wafer probe tip. This eliminates the effect of cable and probe losses on reflection coefficient, which enables higher magnitudes to be synthesized at the test device input than for conventional tuners, potentially increasing noise parameter measurement accuracy.
Keywords :
HEMT integrated circuits; III-V semiconductors; electric noise measurement; field effect MMIC; gallium arsenide; integrated circuit measurement; microwave measurement; probes; GaAs; HEMT circuits; MMIC; measurement accuracy; microwave measurement; noise parameter measurement; on-wafer measurements; reflection coefficient; source impedance tuner; test device input; wafer probe tip; Acoustic reflection; Gallium arsenide; HEMTs; Impedance; Loss measurement; MMICs; Microwave devices; Probes; Testing; Tuners;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3360-8
DOI :
10.1109/MCS.1996.506318
