Title :
Base current instability of AlGaAs/GaAs HBTs operated at low voltages
Author :
Liou, J.J. ; Rezazadeh, A.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
This paper provides an analysis of the physical mechanisms underlying the long-term base current instability the AlGaAs/GaAs heterojunction bipolar transistor (HBT). Which a current instability gives rise to the HBT long-term current gain drift and thus is a major concern for the HBT liability. Two different types of base current instability commonly found in the AlGaAs/GaAs HBT are reviewed, and a detailed analysis for one of the base current stabilities taking place in the low-voltage region is presented and discussed
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; AlGaAs-GaAs; AlGaAs/GaAs HBTs; base current instability; current instability; heterojunction bipolar transistor; long-term current gain drift; low voltage operation; Circuit testing; Cutoff frequency; Educational institutions; Gallium arsenide; Heterojunction bipolar transistors; Low voltage; Phased arrays; Physics computing; Thermal stresses; USA Councils;
Conference_Titel :
Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
Conference_Location :
Shatin
Print_ISBN :
0-7803-5648-9
DOI :
10.1109/HKEDM.1999.836417
