Title :
Carrier lifetime recombination measurement by conductivity modulation for power p-i-n diode
Author :
Oussalah, S. ; Jerisian, R.
Author_Institution :
Lab. de Microelectron. de Puissance, Univ. Francois Rabelais of Tours, France
Abstract :
A simple and rapid method for determining the minority-carrier recombination lifetime τ in the base of a power p-i-n diode is described. This method is based on the measurement of the basewidth conductivity modulation of junction diode, biased in the forward direction. The exploitation of the conductance-voltage characteristic allows to extract τ. This method will be implanted in the parametric test system (industrial equipment), the goal of which is to follow the parameter evolution of the ASD2TM (Application Specific Discrete) process basic devices. To illustrate the method, it is compared to the reverse recovery methods
Keywords :
carrier lifetime; electron-hole recombination; minority carriers; p-i-n diodes; power semiconductor diodes; semiconductor device testing; ASD2 process basic devices; basewidth conductivity modulation; carrier lifetime recombination measurement; conductance-voltage characteristic; forward direction bias; junction diode; minority-carrier; parameter evolution; parametric test system; power p-i-n diode; Charge carrier lifetime; Conductivity measurement; Electrical equipment industry; Fabrication; Instruments; P-i-n diodes; Power measurement; System testing; Variable speed drives; Voltage;
Conference_Titel :
Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
Conference_Location :
Shatin
Print_ISBN :
0-7803-5648-9
DOI :
10.1109/HKEDM.1999.836419
