• DocumentCode
    1916586
  • Title

    Calculation of junction temperature in heterojunction bipolar transistors

  • Author

    Chang, Yang-Hua ; Wu, Ying-Yih ; Lu, J.-M.

  • Author_Institution
    Nat. Yunlin Univ. of Sci. & Technol., Taiwan
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    110
  • Lastpage
    112
  • Abstract
    A technique to calculate junction temperature of heterojunction bipolar transistors is presented. By measurement of IC as a function of VBE at only a few substrate temperatures, junction temperature can be derived. Measured results are shown with a multi-finger AlGaAs/GaAs transistor
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlGaAs; GaAs; heterojunction bipolar transistors; junction temperature; multi-finger AlGaAs/GaAs transistor; substrate temperatures; Current measurement; Electrical resistance measurement; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Silicon; Temperature dependence; Temperature measurement; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
  • Conference_Location
    Shatin
  • Print_ISBN
    0-7803-5648-9
  • Type

    conf

  • DOI
    10.1109/HKEDM.1999.836420
  • Filename
    836420
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1916586