Title :
A physical approach to enhance BSIM3 NQS model for fast transient simulation
Author :
Lee, Wai-Kit ; Chan, Mansun ; Ko, Ping K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Abstract :
An enhanced BSIM3 non-quasi-static (NQS) model for the large signal transient has been developed. The enhancement followed the same device topology adopted in the BSIM3 NQS model with the addition of a unified equation for the transient gate and substrate current in both the accumulation and inversion operation region. During strong inversion, the existing relaxation time approach is used to model the NQS effect, while in the accumulation region, the MOS transistor behavior is like a MOS capacitor without the source and drain region. The dynamic conversion among the accumulation, depletion and inversion charges is modeled to give the transient substrate and gate current. The enhancement has been implemented in the newly released BSIM3 version 3.2, and comparison has been made with results obtained from a 2-D device simulator. The time penalty for using the new enhancement is about 18% more than the original model
Keywords :
MOS integrated circuits; MOSFET; accumulation layers; inversion layers; semiconductor device models; transient analysis; BSIM3 NQS model; MOS capacitor; MOS transistor behavior; accumulation operation region; depletion; device topology; dynamic conversion; fast transient simulation; gate current; inversion operation region; large signal transient; nonquasistatic model; physical approach; relaxation time approach; substrate current; time penalty; transient gate; transient substrate; Circuit simulation; Circuit topology; Cutoff frequency; Electronic mail; Equations; MOS capacitors; MOSFETs; Predictive models; Transient analysis; Water resources;
Conference_Titel :
Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
Conference_Location :
Shatin
Print_ISBN :
0-7803-5648-9
DOI :
10.1109/HKEDM.1999.836421
