A physical approach to enhance BSIM3 NQS model for fast transient simulation

Author

Lee, Wai-Kit ; Chan, Mansun ; Ko, Ping K.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong

fYear

1999

fDate

1999

Firstpage

114

Lastpage

117

Abstract

An enhanced BSIM3 non-quasi-static (NQS) model for the large signal transient has been developed. The enhancement followed the same device topology adopted in the BSIM3 NQS model with the addition of a unified equation for the transient gate and substrate current in both the accumulation and inversion operation region. During strong inversion, the existing relaxation time approach is used to model the NQS effect, while in the accumulation region, the MOS transistor behavior is like a MOS capacitor without the source and drain region. The dynamic conversion among the accumulation, depletion and inversion charges is modeled to give the transient substrate and gate current. The enhancement has been implemented in the newly released BSIM3 version 3.2, and comparison has been made with results obtained from a 2-D device simulator. The time penalty for using the new enhancement is about 18% more than the original model

Keywords

MOS integrated circuits; MOSFET; accumulation layers; inversion layers; semiconductor device models; transient analysis; BSIM3 NQS model; MOS capacitor; MOS transistor behavior; accumulation operation region; depletion; device topology; dynamic conversion; fast transient simulation; gate current; inversion operation region; large signal transient; nonquasistatic model; physical approach; relaxation time approach; substrate current; time penalty; transient gate; transient substrate; Circuit simulation; Circuit topology; Cutoff frequency; Electronic mail; Equations; MOS capacitors; MOSFETs; Predictive models; Transient analysis; Water resources;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong

Conference_Location

Shatin

Print_ISBN

0-7803-5648-9

Type

conf

DOI

10.1109/HKEDM.1999.836421

Filename

836421