Title :
Study of 1/f noise in III-V nitride based MODFETs at low drain bias
Author :
Ho, Wing Fat ; Tong, K.Y.
Author_Institution :
Dept. of Electron. Eng., Hong Kong Polytech. Univ., Kowloon
Abstract :
Flicker noise in MBE grown III-V nitride MODFETs was characterized from room temperature to 130 K. The voltage noise power spectra, Sv (f), were found to be proportional to 1/fγ where γ depends on the device temperature as well as the gate bias. Study of Sv(f) as a function of the biasing condition was conducted in detail and were found to vary as VG2/(VG-VT)β where β is a function of temperature. Analyses of the data showed that the noise originated from thermal activation of carriers to localized states in the channel area. The experimental data indicated that number fluctuations was not a major factor in the observed noise. However, more work is needed to determine if surface mobility fluctuations played a key role in the 1/f noise
Keywords :
1/f noise; III-V semiconductors; carrier mobility; current fluctuations; flicker noise; high electron mobility transistors; semiconductor device noise; wide band gap semiconductors; 1/f noise; 300 to 130 K; AlGaN; GaN; III-V nitride based MODFETs; MBE grown III-V nitride; biasing condition; device temperature; flicker noise; gate bias; localized states; low drain bias; number fluctuations; room temperature; surface mobility fluctuations; thermal activation of carriers; voltage noise power spectra; 1f noise; Electrons; Frequency; Gallium nitride; HEMTs; III-V semiconductor materials; MODFETs; Temperature distribution; Temperature sensors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
Conference_Location :
Shatin
Print_ISBN :
0-7803-5648-9
DOI :
10.1109/HKEDM.1999.836424
