900 MHz 7.4 W SiGe heterojunction bipolar transistor

Author

Jinshu Zhang ; Jia, Hongyong ; Pei-Hsin Tsien ; Lo, Tai-Chin ; Yang, Zengmin ; Huang, Jie ; Wang, Yihui ; Huang, Luoguang ; Liang, Ctiunguang ; Feng, Mingxian ; Qiyuan Lin

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

1999

fDate

1999

Firstpage

138

Lastpage

141

Abstract

The SiGe heterojunction bipolar transistor (HBT) suitable for microwave power applications was fabricated by a simple planar process compatible with Si process. The current gain of the SiGe HBT is 70, and the breakdown voltages of the collector junction and emitter junction are about 28 V and 5 V respectively. In common emitter configuration and class C operation, the SiGe HBT with continuous wave output power of 7.4 W and power added efficiency of 53% and power gain of 8.7 dB was obtained at the frequency of 900 MHz. Hence, the emitter current linear density of the SiGe HBT with emitter region width of 6 μm is 1.7 A/cm

Keywords

Ge-Si alloys; heterojunction bipolar transistors; microwave power transistors; semiconductor device breakdown; semiconductor materials; 7.4 W; 900 MHz; HBT; SiGe; SiGe heterojunction bipolar transistor; breakdown voltages; class C operation; collector junction; common emitter configuration; continuous wave output power; current gain; emitter current linear density; emitter junction; emitter region width; microwave power applications; power added efficiency; power gain; simple planar process; Fabrication; Fingers; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Nonhomogeneous media; Power generation; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong

Conference_Location

Shatin

Print_ISBN

0-7803-5648-9

Type

conf

DOI

10.1109/HKEDM.1999.836426

Filename

836426