Title :
900 MHz 7.4 W SiGe heterojunction bipolar transistor
Author :
Jinshu Zhang ; Jia, Hongyong ; Pei-Hsin Tsien ; Lo, Tai-Chin ; Yang, Zengmin ; Huang, Jie ; Wang, Yihui ; Huang, Luoguang ; Liang, Ctiunguang ; Feng, Mingxian ; Qiyuan Lin
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
The SiGe heterojunction bipolar transistor (HBT) suitable for microwave power applications was fabricated by a simple planar process compatible with Si process. The current gain of the SiGe HBT is 70, and the breakdown voltages of the collector junction and emitter junction are about 28 V and 5 V respectively. In common emitter configuration and class C operation, the SiGe HBT with continuous wave output power of 7.4 W and power added efficiency of 53% and power gain of 8.7 dB was obtained at the frequency of 900 MHz. Hence, the emitter current linear density of the SiGe HBT with emitter region width of 6 μm is 1.7 A/cm
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; microwave power transistors; semiconductor device breakdown; semiconductor materials; 7.4 W; 900 MHz; HBT; SiGe; SiGe heterojunction bipolar transistor; breakdown voltages; class C operation; collector junction; common emitter configuration; continuous wave output power; current gain; emitter current linear density; emitter junction; emitter region width; microwave power applications; power added efficiency; power gain; simple planar process; Fabrication; Fingers; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Nonhomogeneous media; Power generation; Silicon germanium; Voltage;
Conference_Titel :
Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
Conference_Location :
Shatin
Print_ISBN :
0-7803-5648-9
DOI :
10.1109/HKEDM.1999.836426
