Title :
Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al2O3 (0001)
Author :
Sundaravel, B. ; Luo, E.Z. ; Xu, J.B. ; Wilson, I.H. ; Fong, Patrick ; Wang, L.S. ; Surya, Charles
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong
Abstract :
Rutherford backscattering spectrometry (RBS) and channeling is used to determine the presence of wurtzite and zinc-blende phases of MOCVD grown Mg-doped GaN(0001) on Al2O3(0001) substrate with GaN buffer layer from the off-normal axial scans and is complemented with high resolution X-ray diffraction measurements. The in-plane orientation of wurtzite phase is found to be GaN [101¯0]||A12O3[101¯0]. Presence of stacking faults and dislocations at different depths are observed in the GaN epilayer. The effects of rapid thermal annealing (RTA) on the phase contents, thickness and crystalline quality of GaN epilayer are also studied
Keywords :
III-V semiconductors; MOCVD coatings; Rutherford backscattering; X-ray diffraction; channelling; dislocations; gallium compounds; rapid thermal annealing; semiconductor epitaxial layers; semiconductor growth; stacking faults; vapour phase epitaxial growth; wide band gap semiconductors; Al2O3; Al2O3 (0001); GaN buffer layer; GaN epilayer; GaN:Mg; MOCVD grown Mg-doped GaN; RBS; RTA; Rutherford backscattering spectrometry; crystalline quality; dislocations; high resolution X-ray diffraction; in-plane orientation; ion channeling; mixed phases; off-normal axial scans; phase contents; rapid thermal annealing; stacking faults; thickness; wurtzite; zinc-blende; Backscatter; Buffer layers; Crystallization; Gallium nitride; MOCVD; Phase measurement; Rapid thermal annealing; Spectroscopy; Stacking; X-ray diffraction;
Conference_Titel :
Electron Devices Meeting, 1999. Proceedings. 1999 IEEE Hong Kong
Conference_Location :
Shatin
Print_ISBN :
0-7803-5648-9
DOI :
10.1109/HKEDM.1999.836428
