Title :
A silicon MOS process for integrated RF power amplifiers
Author :
Dragon, C. ; Costa, J. ; Lamey, D. ; Ngo, D. ; Burger, W. ; Camilleri, N.
Author_Institution :
Commun. Products Lab., Motorola Inc., Tempe, AZ, USA
Abstract :
A silicon-based technology is presented which integrates passive components with a silicon power MOSFET for use in integrated power amplifiers at UHF, VHF, and RF frequencies. This low-cost process incorporates capacitors, inductors, resistors, ground vias, transmission lines, and an ESD protection diode. A design library containing models and layouts for the active and passive components was compiled.
Keywords :
MOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; VHF amplifiers; electrostatic discharge; elemental semiconductors; integrated circuit technology; power amplifiers; protection; radiofrequency amplifiers; silicon; ESD protection diode; Si; Si MOS process; UHF; VHF; capacitors; design library; ground vias; inductors; integrated RF power amplifiers; layouts; low-cost process; passive components; power MOSFET; resistors; transmission lines; Inductors; MOS capacitors; MOSFET circuits; Power MOSFET; Power amplifiers; Power transmission lines; Radio frequency; Radiofrequency amplifiers; Resistors; Silicon;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3360-8
DOI :
10.1109/MCS.1996.506333
