DocumentCode :
1916792
Title :
Field emission from HfC or Ni films deposited on single tip Mo field emitters
Author :
Mackie, W.A. ; Xie, T.-B. ; Davis, P.R.
Author_Institution :
Linfield Res. Inst., McMinnville, OR, USA
fYear :
1997
fDate :
19-22 May 1997
Firstpage :
283
Abstract :
Summary form only given, as follows. Field emission from Ni films and from HfC films deposited on single molybdenum field emitter tips made from polycrystalline wire have been investigated. I-V data and Fowler-Nordheim analysis show that the work function as well as the tip radius have changed in both cases. The emission turn on voltage was lower by as much a 69 percent for HfC films, but only 5 percent for Ni films. Initially, similar field emission current stability was obtained for both films, however after heating the substrate to 400/spl deg/C the stability increased for the HfC coated emitters. These tips were next exposed to the air. Emission turn on voltages for HfC films increased after air exposure but they were still lower than those observed for Ni dosed tips. Furthermore, emission stability was better for the HfC coated emitter substrate.
Keywords :
field emission; hafnium compounds; molybdenum; nickel; vacuum microelectronics; work function; 400 C; Fowler-Nordheim analysis; HfC; HfC coated emitter substrate; I-V data; Mo; Ni; Ni dosed tips; deposited HfC films; deposited Ni films; emission stability; field emission; polycrystalline wire; single tip Mo field emitters; substrate heating; work function; Data analysis; Heating; Hybrid fiber coaxial cables; Microelectronics; Stability; Voltage; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 1997. IEEE Conference Record - Abstracts., 1997 IEEE International Conference on
Conference_Location :
San Diego, CA, USA
ISSN :
0730-9244
Print_ISBN :
0-7803-3990-8
Type :
conf
DOI :
10.1109/PLASMA.1997.605076
Filename :
605076
Link To Document :
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