DocumentCode
1916807
Title
New route to Bi+-doped crystals: Preparation and NIR luminescence of K, Rb and Cs ternary chlorides, containing univalent bismuth
Author
Romanov, A.N. ; Veber, A.A. ; Fattakhova, Z.T. ; Vtyurina, D.N. ; Usovich, O.V. ; Grigoriev, F.V. ; Haula, E.V. ; Trusov, L.A. ; Kazin, P.E. ; Korchak, V.N. ; Tsvetkov, V.B. ; Sulimov, V.B.
Author_Institution
Res. Comput. Center, M.V. Lomonosov Moscow State Univ., Moscow, Russia
fYear
2013
fDate
12-16 May 2013
Firstpage
1
Lastpage
1
Abstract
In Lewis acidic melts it is possible to obtain the metal cations in unusually low oxidation (subvalent) states with unusual electronic configurations. Specifically, univalent bismuth cation possesses the open shell 6p2 configuration with several low-lying electronic exited states, causing the absorption bands in visible/NIR and intense long-lived (hundreds of μs) and broad luminescence in NIR [1-4]. Quantum chemical estimation of Bi+ ionic radius in different coordination states gives the values, which place the radius of Bi+ very close to Rb+ cation. This fact open the possibility to prepare the crystal hosts with alkali cations of similar size (K+, Rb+, Cs+), which can be doped with Bi+ by isomorphous substitution. The experimental investigation of NIR luminescence in bismuth-doped RbPb2Cl5 [1], KAlCl4 [2,3], KMgCl3 [3] and CsI [4] crystals support this conclusion.
Keywords
aluminium compounds; bismuth; caesium compounds; crystal growth from melt; lead compounds; magnesium compounds; photoluminescence; potassium compounds; rubidium compounds; Bi+ ionic radius; Bi+-doped crystals; CsI:Bi; KAlCl4:Bi; KMgCl3:Bi; Lewis acidic melts; NIR luminescence; RbPb2Cl5:Bi; electronic configurations; isomorphous substitution; low oxidation states; preparation; quantum chemical estimation; ternary chlorides; univalent bismuth; Absorption; Bismuth; Chemicals; Crystals; Educational institutions; Luminescence; Physics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location
Munich
Print_ISBN
978-1-4799-0593-5
Type
conf
DOI
10.1109/CLEOE-IQEC.2013.6800996
Filename
6800996
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