Title :
Quantum well intermixing using argon plasma generated in a reactive-ion etching system on InGaAs/InGaAsP laser structures
Author :
Leong, D. ; Djie, H.S. ; Ang, L.K.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
Quantum-well intermixing using an argon plasma, generated by a reactive-ion etching system, is demonstrated on InGaAs/InGaAsP quantum well laser structures. The parameters of the process were optimised by using Taguchi´s method. Using an argon flowrate of 50 sccm, pressure of 30 mTorr and RF power of 480 W, a blue shift of 73 nm was obtained after exposure to the plasma for 5 minutes.
Keywords :
III-V semiconductors; Taguchi methods; chemical interdiffusion; energy gap; gallium arsenide; indium compounds; photoluminescence; plasma materials processing; quantum well lasers; semiconductor quantum wells; spectral line shift; sputter etching; 30 mtorr; 480 W; 5 min; Ar; Ar flowrate; Ar plasma; InGaAs-InGaAsP; InGaAs/InGaAsP laser structures; PL spectra; RF power; Taguchi method; bandgap energy blue shift; process parameters optimisation; quantum-well intermixing; reactive-ion etching system; Annealing; Argon; Etching; Indium gallium arsenide; Photonic band gap; Plasma applications; Plasma properties; Plasma waves; Quantum well lasers; Substrates;
Conference_Titel :
Fibre and Optical Passive Components, 2002. Proceedings of 2002 IEEE/LEOS Workshop on
Print_ISBN :
0-7803-7556-4
DOI :
10.1109/FOPC.2002.1015818
