Dynamic Behavior of a-Si Devices for Flat-Panel Displays

Active-Matrix Liquid Crystal technology is now one of the dominant technologies for the production of flat-panel displays. For large area displays, a common choice for the active switch are amorphous silicon thin-film transistors (a-Si TFTs). An important issue is also the development of logic circuits in the same thin-film technology, to fabricate the peripheral driving circuits on the display substrate along with the switching matrix of TFTs. To predict the dynamic behavior of a-Si devices it is necessary to account for the energy-distributed traps of amorphous silicon. The results shown here are based on realistic cases and have been achieved by extending to the case of energy-distributed traps the novel method for solving the transient semiconductor equations in the presence of gap states presented in [1].