Loss measurements in intermixed InGaAs/AlGaInAs multiple-quantum-well ridge waveguides

Author

Bubke, Karsten ; Sorel, Marc ; Robert, Franck ; Bryce, A. Catrina ; Arnold, John M. ; Marsh, John H.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

2002

fDate

2002

Firstpage

153

Lastpage

157

Abstract

A study of the losses in InGaAs/AlGaInAs multiple-quantum-well ridge waveguides band edge shifted by quantum well intermixing is presented. The intermixing process is based on point defects generated on the sample surface during the deposition of sputtered SiO₂ and a subsequent rapid thermal annealing. It is demonstrated that for small wavelength shifts (60-80 nm), losses are considerably lower than in samples with maximum band edge shift (150 nm). Minimum losses of 6 dB/cm have been measured.

Keywords

III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; indium compounds; integrated optics; optical losses; optical waveguides; quantum well devices; rapid thermal annealing; ridge waveguides; semiconductor quantum wells; InGaAs-AlGaInAs; SiO₂; band edge shift; intermixed InGaAs/AlGaInAs multiple-quantum-well ridge waveguides; loss measurements; maximum band edge shift; minimum losses; photonic integrated circuits; point defects; quantum well intermixing; rapid thermal annealing; small wavelength shifts; sputtered SiO₂ deposition; Indium gallium arsenide; Indium phosphide; Loss measurement; Optical losses; Photonic band gap; Quantum well devices; Rapid thermal annealing; Rapid thermal processing; Temperature; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Fibre and Optical Passive Components, 2002. Proceedings of 2002 IEEE/LEOS Workshop on

Print_ISBN

0-7803-7556-4

Type

conf

DOI

10.1109/FOPC.2002.1015819

Filename

1015819