Title :
Technology Requirements for Next Decade Flash Memories
Author :
Yoshikawa, Kuniyoshi
Author_Institution :
Toshiba Corporation, Yokohama, Japan
fDate :
11-13 September 2000
Keywords :
Dielectrics; Electrons; Ferroelectric films; Flash memory; Guidelines; Leakage current; Nonvolatile memory; Random access memory; Reliability engineering; Robustness;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194721
