Distributed small signal model for multi-fingered GaAs PHEMT/MESFET devices

Author

Nash, S.J. ; Platzker, A. ; Struble, W.

Author_Institution

Raytheon Adv. Device Center, Andover, MA, USA

fYear

1996

fDate

17-19 June 1996

Firstpage

219

Lastpage

222

Abstract

A fully distributed equivalent circuit PHEMT and MESFET model is presented in closed form expressions for single finger end-fed FET geometry. The model includes self and mutual inductances and a new frequency dependent gate resistance. The model was used successfully to model multi-fingered devices which were subjected to equi-phase gate and drain excitations. Comparisons between measured data and model results are shown to be in excellent agreement for all S-parameters to 50 GHz regardless of unit gate width. Scaling issues are also investigated for the new distributed model.

Keywords

III-V semiconductors; S-parameters; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; high electron mobility transistors; microwave field effect transistors; semiconductor device models; 50 GHz; GaAs; MESFETs; PHEMTs; S-parameters; distributed small signal model; equivalent circuit; frequency dependent gate resistance; multi-fingered devices; mutual inductance; scaling; self inductance; single finger end-fed FETs; Electrical resistance measurement; Equivalent circuits; FETs; Fingers; Frequency dependence; Gallium arsenide; Geometry; MESFET circuits; PHEMTs; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996. Digest of Papers., IEEE 1996

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-3360-8

Type

conf

DOI

10.1109/MCS.1996.506340

Filename

506340