Title :
Impact of the Furnace Nitridation Temperature in N2O Ambient on the Quality of the Si/SiO2 System
Author :
Vincent, E. ; Papadas, C. ; Riva, C. ; Pio, F. ; Ghibaudo, G.
Author_Institution :
SGS-Thomson Microelectronics, Central R&D, BP 16,38921 Crolles, France; Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs/ENSERG, BP 257, 38047 Grenoble, France
Abstract :
The impact of the furnace nitridation temperature on the quality of the Si/SiO2 system will be investigated. The analysis will be conducted in terms of bulk oxide trapping properties after Fowler-Nordheim injection, breakdown parameters and hot carrier endurance data. Finally, it will be demonstrated that a lower furnace nitridation temperature results to an insulator which exhibits similar reliability performance to that obtained after high temperature treatment, provided that the nitridation time has been properly adjusted.
Keywords :
Breakdown voltage; CMOS technology; Capacitors; Electric breakdown; Furnaces; Hot carriers; Insulation; Microelectronics; Stress; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
