• DocumentCode
    1917032
  • Title

    Comparison of Low Thermal Budget ONO Bottom Oxides with Improved Data Retention Characteristics for Very High Density Flash Memory Products

  • Author

    Buisson, O.Roux dit ; Mondon, F. ; Guillaumot, B. ; Reimbold, G. ; Martin, F.

  • Author_Institution
    LETI (CEA Technologies Avancées) DMEL CEN/G, 85X, 38054 Grenoble Cedex 9 France.
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    33
  • Lastpage
    36
  • Abstract
    This paper discusses the data retention properties of ONO interpolysilicon dielectrics. Several low thermal budget recipes of bottom oxide are compared to improve FLASH E2PROM cells shrinkage toward 64 Mb generation. Best results are obtained for LPCVD bottom oxide against chlorinated and dry ones.
  • Keywords
    Dielectric devices; Dielectric loss measurement; Dielectric substrates; EPROM; Flash memory; Nonvolatile memory; Oxidation; Performance evaluation; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435663
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1917032