Title :
The design of 433 MHz class AB CMOS power amplifier
Author :
Seoung-Jae Yoo ; Ahn, Hong Jo ; Hella, Mona M. ; Ismail, Mohammed
Author_Institution :
Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
Abstract :
This paper reports the design and simulation results of a 433 MHz Power Amplifier (PA) which is designed in a 0.5 μm CMOS technology and can provide variable gain modes. The PA consists of a driver and an output stage, and the gain is adjustable using digital codes. In this paper, 16.5 dB and 3.5 dB gain modes are chosen. This amplifier matches a 50 ohm load and provides 20 mW of output power at 432-434 MHz from a 3 V supply. The overall power efficiency is 30%
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; differential amplifiers; gain control; integrated circuit design; power amplifiers; power integrated circuits; 0.5 micron; 16.5 dB; 20 mW; 3 V; 3.5 dB; 30 percent; 433 MHz; CMOS power amplifier; class AB; digital codes; driver; output stage; variable gain modes; CMOS technology; Circuit simulation; Driver circuits; Frequency shift keying; Gain; Power amplifiers; Radio frequency; Switches; Transceivers; Very large scale integration;
Conference_Titel :
Mixed-Signal Design, 2000. SSMSD. 2000 Southwest Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5975-5
DOI :
10.1109/SSMSD.2000.836442
