Title :
Effect of Rapid Thermal N2O Annealing on the Dielectric Properties of LPCVD Ta2O5 Films
Author :
Sun, S.C. ; Chen, T.F.
Author_Institution :
National Nano Device Laboratory, Chiao Tung Univertsity, Hsinchu, Taiwan, R.O.C.
Abstract :
Effects of the heat treatment in N2O using rapid thermal method on the dielectric properties of the Ta2O5 thin film(100-200 Å) grown on the Si substrate by the chemical vapor deposition approach were investigated. The leakage current was drastically reduced from more than 10¿3 to less than 10¿8 A/cm2 in an electric field of 3MV/cm by the RTN2O annealing at 800 °C. The decrease in leakage current can be attributed to the incorporation of nitrogen in the Ta2O5 films and the reduction of oxygen vacancies by the atomic oxygen generated from the dissociation of N2O at high temperatures.
Keywords :
Current-voltage characteristics; Dielectric substrates; Dielectric thin films; Furnaces; Leakage current; Nitrogen; Rapid thermal annealing; Sputtering; Sun; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
