Title :
Subthreshold hump mechanisms for both surface and buried channel MOSFET using STI technology
Author :
Lee, Hsin-Yi ; Chang, Chih-Sheng ; Hsieh, Ting-Hua ; Guo, Jyh-Chyurn
Author_Institution :
Vanguard International Semiconductor Corporation, Hsinchu, Taiwan
fDate :
11-13 September 2000
Keywords :
CMOS logic circuits; CMOS technology; Isolation technology; MOS devices; MOSFET circuits; Manufacturing industries; Manufacturing processes; Random access memory; Silicon; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194726
