Title :
Model for Simulation of AlGaAs-GaAs Power Heterostructure FETs
Author :
Garber, Gennadiy Z.
Author_Institution :
Sci. & Res. Inst. "PULSAR", Moscow
Abstract :
A two-dimensional model of AlGaAs-GaAs heterostructure FETs that takes into account avalanche multiplication of charge carriers is proposed. The model suggested is a combination of the quasihydrodynamic model of electron transport, drift-diffusion model of hole transport, and Anderson model of heterojunctions. On its basis, a computer program simulating transistor structures with SiN on the sides of the Ti gate is developed. For two transistor structures, the input data and the calculated static current-voltage characteristics are presented. It is shown that the calculated and experimental breakdown voltages in the cutoff mode are in good agreement
Keywords :
aluminium compounds; avalanche breakdown; gallium compounds; high electron mobility transistors; power field effect transistors; power integrated circuits; power semiconductor devices; silicon compounds; AlGaAs-GaAs; Anderson model; SiN; Ti; avalanche multiplication; charge carrier; computer program; drift-diffusion model; electron transport; heterojunctions; hole transport; power heterostructure FET; quasihydrodynamic model; static current-voltage characteristics; transistor structure; Charge carrier processes; Charge carriers; Electric breakdown; Electron mobility; Gallium arsenide; HEMTs; Heterojunctions; Impact ionization; MESFET integrated circuits; MODFETs; Anderson model; Avalanche multiplication; Breakdown voltage; Drift-diffusion model; Feedback; HFET; NAM line; Quasi-hydrodynamic model;
Conference_Titel :
Computer as a Tool, 2005. EUROCON 2005.The International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0049-X
DOI :
10.1109/EURCON.2005.1630072
