Title :
Controlled Sub-nm Oxide Growth and its Application to High Speed Bipolar Poly-Emitter Transistors
Author :
Berthold, A.M. ; Mulder, J.G.M. ; Felde, A.V. ; Kwakman, L.F.Tz. ; Weitzel, I. ; Philipsborn, H.v. ; Klose, H.
Author_Institution :
Siemens AG, Corporate Research, Dep. ZFE BT ACM 12, Otto-Hahn-Ring 6, 81739 Munich, FRG; Universitÿt Regensburg, NWF II, Universitÿtsstr. 31, 93053 Regensburg, FRG
Abstract :
Controlled sub-nm oxide growth on (100) silicon wafers in a controlled, O2 containing ambient of a LPCVD-polysilicon deposition clustertool is demonstrated. As a comparison, a conventional LPCVD-polysilicon deposition furnace is used which generates a sub-nm oxide during loading the wafers into the heated furnace. For the first time results for different substrate doping levels are presented. Applications to high speed bipolar poly-emitter transistors are shown.
Keywords :
Doping; Europe; Furnaces; Oxidation; Pressure control; Silicon; Substrates; Temperature dependence; Thickness measurement; Transistors;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
