Title :
Narrow Device Issues in Deep-Submicron Technologies-the Influence of Stress, TED and Segregation on Device Performance
Author :
Nouri, Faran ; Scott, Gregory ; Rubin, Mark ; Manley, Martin ; Stolk, Peter
Author_Institution :
Philips Semiconductors, San Jose, CA, USA
fDate :
11-13 September 2000
Keywords :
Boron; Compressive stress; Etching; Isolation technology; Laboratories; Logic design; MOS devices; Oxidation; Semiconductor materials; Temperature;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194727
