Title :
Abnormal Gate Oxide Failure due to Stress enhanced Polycrystalline Silicon Diffusion
Author :
Ahn, Yongseok ; Ha, Daewon ; Koh, Gwanhyeob ; Chung, TaeYoung ; Kim, Kinam
Author_Institution :
Samsung Electronics Co., Yongin City, Kyungki-Do, Korea
fDate :
11-13 September 2000
Keywords :
Silicon; Stress;
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194729
