Abnormal Gate Oxide Failure due to Stress enhanced Polycrystalline Silicon Diffusion

Author

Ahn, Yongseok ; Ha, Daewon ; Koh, Gwanhyeob ; Chung, TaeYoung ; Kim, Kinam

Author_Institution

Samsung Electronics Co., Yongin City, Kyungki-Do, Korea

fYear

2000

fDate

11-13 September 2000

Firstpage

120

Lastpage

123

Keywords

Silicon; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN

2-86332-248-6

Type

DOI

10.1109/ESSDERC.2000.194729

Filename

1503659

Link To Document