• DocumentCode
    1917253
  • Title

    Identification of Peripheral Base Currents in (Si or SiGe) Epitaxial-Base Single-Polysilicon Self-Aligned Bipolar Transistors

  • Author

    Boussetta, H. ; Giroult-Matlakowski, G. ; Tron, B. Le ; Dutartre, D. ; Warren, P. ; Bouzid, M.J. ; Chantre, A.

  • Author_Institution
    France Telecom, CNET/CNS, BP 98, F-38243 Meylan cedex, France
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    63
  • Lastpage
    66
  • Abstract
    This paper reports an investigation of non-ideal base currents in epitaxial base (Si or Si1-xGex) bipolar transistors fabricated using a single-polysilicon self-aligned technology. Two independent leakage components are identified. Their spatial and physical origins are used to outline the main critical fabrication steps of this technology.
  • Keywords
    Bipolar transistors; Epitaxial growth; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Leakage current; Silicon germanium; Space charge; Space technology; Telecommunications;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435670
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1917253