DocumentCode
1917326
Title
A Comparison of Implant Enhanced Dopant Diffusion in Bulk and SOI Material
Author
Crowder, S.W. ; Griffin, P.B. ; Plummer, J.D.
Author_Institution
Applied Electronics Lab 001, Stanford University, Stanford, CA 94305-4055
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
77
Lastpage
80
Keywords
Bonding; Boron; Doping profiles; Etching; Implants; Predictive models; Rapid thermal annealing; Semiconductor process modeling; Silicon on insulator technology; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435673
Link To Document