DocumentCode :
1917341
Title :
A 0.5-8.5 GHz fully-differential CMOS RF distributed amplifier
Author :
Ahn, Hee Tue ; Allstot, David J.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fYear :
2000
fDate :
2000
Firstpage :
109
Lastpage :
112
Abstract :
A fully-differential four-stage distributed amplifier (DA) with 5.5 dB gain and 8.5 GHz bandwidth has been integrated in 1.3 mm×2.2 mm in a 0.6 μm digital CMOS process. The DA dissipates 216 mW from a single 3 V supply. A custom CAD tool was used to optimize the DA design including device and package parasitics
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; circuit CAD; differential amplifiers; distributed amplifiers; field effect MMIC; integrated circuit design; integrated circuit packaging; 0.5 to 8.5 GHz; 0.6 micron; 216 mW; 3 V; 5.5 dB; 8.5 GHz; custom CAD tool; device parasitics; digital CMOS process; four-stage distributed amplifier; fully-differential CMOS RF distributed amplifier; package parasitics; Bandwidth; CMOS process; Distributed amplifiers; Impedance; Inductance; Inductors; Noise figure; Packaging machines; Pulse amplifiers; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mixed-Signal Design, 2000. SSMSD. 2000 Southwest Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5975-5
Type :
conf
DOI :
10.1109/SSMSD.2000.836456
Filename :
836456
Link To Document :
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