DocumentCode
1917357
Title
Observation of a New Hole Gate Current Component in p(+)-poly Gate p-channel MOSFET´s
Author
Driussi, F. ; Esseni, D. ; Selmi, L. ; Piazza, F.
Author_Institution
University of Udine, Italy
fYear
2000
fDate
11-13 September 2000
Firstpage
136
Lastpage
139
Keywords
Breakdown voltage; Charge carrier processes; Feedback; Hot carriers; Impact ionization; MOS devices; MOSFET circuits; Microelectronics; Physics; Substrate hot electron injection;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN
2-86332-248-6
Type
conf
DOI
10.1109/ESSDERC.2000.194733
Filename
1503663
Link To Document