DocumentCode
1917365
Title
A New Calibration Method for Dopant Diffusion Models Applied to Silicon Heterobipolar Technology
Author
Jones, S.K. ; Hill, C. ; Nigrin, S. ; Manson, A J ; Dowsett, M.G.
Author_Institution
GEC-Marconi Materials Technology Ltd, Caswell, Towcester, Northants NN12 8EQ, UK
fYear
1994
fDate
11-15 Sept. 1994
Firstpage
85
Lastpage
88
Abstract
A new procedure for realistic calibration of dopant diffusion models to SIMS data for thin doped Si and SiGe layers has been achieved by bringing model data into a form appropriate for direct comparison with measured SIMS and so separating the genuine diffusion broadening from instrumental effects.
Keywords
Annealing; Boron; Calibration; Convolution; Etching; Furnaces; Germanium silicon alloys; Instruments; Semiconductor process modeling; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location
Edinburgh, Scotland
Print_ISBN
0863321579
Type
conf
Filename
5435675
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