Title :
A New Calibration Method for Dopant Diffusion Models Applied to Silicon Heterobipolar Technology
Author :
Jones, S.K. ; Hill, C. ; Nigrin, S. ; Manson, A J ; Dowsett, M.G.
Author_Institution :
GEC-Marconi Materials Technology Ltd, Caswell, Towcester, Northants NN12 8EQ, UK
Abstract :
A new procedure for realistic calibration of dopant diffusion models to SIMS data for thin doped Si and SiGe layers has been achieved by bringing model data into a form appropriate for direct comparison with measured SIMS and so separating the genuine diffusion broadening from instrumental effects.
Keywords :
Annealing; Boron; Calibration; Convolution; Etching; Furnaces; Germanium silicon alloys; Instruments; Semiconductor process modeling; Silicon germanium;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
