DocumentCode :
1917390
Title :
Comparison of Second Impact Ionization Phenomena Between 0.18um N- and P-channel MOSFET´s
Author :
Bravaix, A. ; Goguenheim, D. ; Revil, N. ; Vincent, E.
Author_Institution :
ISEM, Toulon, France
fYear :
2000
fDate :
11-13 September 2000
Firstpage :
140
Lastpage :
143
Keywords :
CMOS technology; Channel hot electron injection; Charge carrier processes; Electron emission; Impact ionization; MOS devices; MOSFET circuits; Thermionic emission; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194734
Filename :
1503664
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1917390
بازگشت