• DocumentCode
    1917390
  • Title

    Comparison of Second Impact Ionization Phenomena Between 0.18um N- and P-channel MOSFET´s

  • Author

    Bravaix, A. ; Goguenheim, D. ; Revil, N. ; Vincent, E.

  • Author_Institution
    ISEM, Toulon, France
  • fYear
    2000
  • fDate
    11-13 September 2000
  • Firstpage
    140
  • Lastpage
    143
  • Keywords
    CMOS technology; Channel hot electron injection; Charge carrier processes; Electron emission; Impact ionization; MOS devices; MOSFET circuits; Thermionic emission; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194734
  • Filename
    1503664
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1917390