Dynamic Behavior of Arsenic Clusters in Silicon

A new experimental setup was developed to study the clustering process of arsenic in silicon. It is based on the use of homogeneously doped SOI material which simplified the interpretation of the electrical measurements. Using this experimental setup, the inactivation of arsenic was investigated for chemical concentrations from 2·10²⁰ cm^¿3 to 1·10²¹ cm^¿3 in the temperature range between 700 °C and 900 °C. For a cluster with two atoms and one electron, and a cluster with three atoms and three electrons, temperature dependent reaction constants were determined, allowing a close description of the measured data.