Title :
Monte Carlo Simulation of Ion Implantation into Two-Dimensional Structures and its Application to the Prediction of Lateral SIMS Results
Author :
Simionescu, A. ; Hobler, G. ; von Criegern, R.
Author_Institution :
University of Technology Vienna, GuÃ\x9fhausstraÃ\x9fe 27-29/3598, A-1040 Vienna, AUSTRIA
Abstract :
The Monte Carlo simulator IMSIL [2] has been extended to take arbitrarily shaped 2-D structures into account. The lateral dose distribution at a mask edge is studied and compared with lateral SIMS measurements. The lateral dose distributions for boron and arsenic in amorphous and crystalline silicon are compared.
Keywords :
Atomic layer deposition; Boron; Geometry; Image storage; Ion implantation; Monte Carlo methods; Predictive models; Scattering; Silicon; Two dimensional displays;
Conference_Titel :
Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
Conference_Location :
Edinburgh, Scotland
