• DocumentCode
    1917434
  • Title

    Monte Carlo Simulation of Ion Implantation into Two-Dimensional Structures and its Application to the Prediction of Lateral SIMS Results

  • Author

    Simionescu, A. ; Hobler, G. ; von Criegern, R.

  • Author_Institution
    University of Technology Vienna, GuÃ\x9fhausstraÃ\x9fe 27-29/3598, A-1040 Vienna, AUSTRIA
  • fYear
    1994
  • fDate
    11-15 Sept. 1994
  • Firstpage
    97
  • Lastpage
    100
  • Abstract
    The Monte Carlo simulator IMSIL [2] has been extended to take arbitrarily shaped 2-D structures into account. The lateral dose distribution at a mask edge is studied and compared with lateral SIMS measurements. The lateral dose distributions for boron and arsenic in amorphous and crystalline silicon are compared.
  • Keywords
    Atomic layer deposition; Boron; Geometry; Image storage; Ion implantation; Monte Carlo methods; Predictive models; Scattering; Silicon; Two dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1994. ESSDERC '94. 24th European
  • Conference_Location
    Edinburgh, Scotland
  • Print_ISBN
    0863321579
  • Type

    conf

  • Filename
    5435678
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1917434