DocumentCode
1917453
Title
Physically Based Comparison of Current Noise Analysis of Si BJT´s and SiGe HBT´s
Author
Martín-Martínez, M.J. ; Pardo, D.
Author_Institution
Universidad de Salamanca, Spain
fYear
2000
fDate
11-13 September 2000
Firstpage
148
Lastpage
151
Keywords
Electrodes; Electromagnetic compatibility; Fluctuations; Germanium silicon alloys; Heterojunction bipolar transistors; Microscopy; Noise level; Noise reduction; Photonic band gap; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN
2-86332-248-6
Type
conf
DOI
10.1109/ESSDERC.2000.194736
Filename
1503666
Link To Document